2003. 3. 11
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX302U
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
B
D
G
USV
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
5
4
C
C
A1
1.3 0.1
A1
+
_
+
_
+
_
+
_
+
_
1. D ANODE
2. Q BASE
3. Q EMITTER
4. Q COLLECTOR
5. D CATHODE
1
1
1
1
1
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
MARK SPEC
CF
Type Name
1
2
3
4
5
Marking
Type
KTX302U
KTX302U
Q
1
h
FE
Rank : Y
Q
1
h
FE
Rank : GR
Mark
CF
CH
TRANSISTOR Q
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
Collector Current
I
C
-150
Emitter Current
I
B
-30
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE (SBD) D
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
30
V
Reverse Voltage
V
R
30
V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
200
Surge Current (10mS)
I
FSM
1
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
2003. 3. 11
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KTX302U
Revision No : 1
Note) h
FE
Classification Y:120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE (SBD) D
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-100 , I
B
=-10
-
-0.1
-0.3
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1
-
4
7
Noise Figure
NF
V
CE
=-6V, I
C
=-0.1 , f=1 , Rg=10
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.22
-
V
V
F(2)
I
F
=10mA
-
0.29
-
V
F(3)
I
F
=100mA
-
0.38
-
V
F(4)
I
F
=200mA
-
0.43
0.55
Reverse Current
I
R
V
R
=30V
-
-
50
Total Capacitance
C
T
V
R
=0, f=1
-
50
-
2003. 3. 11
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KTX302U
Revision No : 1
C
COLLECTOR CURRENT I (mA)
0
-40
30
DC CURRENT GAIN h
FE
3k
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (mA)
C
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
1
C
I - V
Q (PNP TRANSISTOR)
h - I
V - I
C
COLLECTOR CURRENT I (mA)
-0.1
-0.1
BASE-EMITTER SATURATION
BASE CURRENT I (
A)
B
-0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
f - I
C
COLLECTOR CURRENT I (mA)
0.1
3k
T
TRANSITION FREQUENCY f (MHz)
10
COLLECTOR-EMITTER SATURATION
-0.01
-0.1
COLLECTOR CURRENT I (mA)
C
V - I
-1
-2
-3
-4
-5
-6
-7
-80
-120
-160
-200
-240
I =-0.2mA
B
B
I =-0.5mA
B
I =-1.0mA
B
I =-1.5mA
B
I =-2.0mA
B
I =0mA
COMMON EMITTER
Ta=25 C
FE
C
-10
-30
-100
-300
50
100
300
500
1k
Ta=100 C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=-25 C
V =-6V
V =-6V
CE
CE
V =-1V
V =-1V
COMMON EMITTER
CE(sat)
C
VOLTAGE V (V)
CE(sat)
-0.3
-1
-3
-10
-30
-100
-300
-0.03
-0.05
-0.1
-0.3
-0.5
-1
Ta=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C B
C
BE(sat)
VOLTAGE V (V)
BE(sat)
-0.3
-1
-10
-30 -100 -300
-3
-0.3
-0.5
-1
-3
-5
-10
COMMON EMITTER
I /I =10
Ta=25 C
C B
T
C
0.3
1
3
10
30
100
300
30
50
100
300
500
1k
COMMON EMITTER
V =-10V
Ta=25 C
CE
B
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-3
-10
-30
-100
-300
-1k
COMMON EMITTER
V =-6V
CE
Ta=1
00
C
Ta=25 C
Ta=-
25
C
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